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PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 - 1880 MHz
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2
EDGE EVM Performance
VDD = 28 V, IDQ = 550 mA, = 1836.6 MHz
5 50
Features
* * *
40
Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE performance - Average output power = 44 dBm - Gain = 16.5 dB - Efficiency = 40.5% - EVM = 2.0% Typical CW performance - Output power at P-1dB = 72 W - Gain = 15.5 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power
4
Efficiency
EVM RMS (avg. %) .
3
30
Drain Efficiency (%)
*
2
20
1
10
EVM
0 30 32 34 36 38 40 42 44 46 0
* * *
Output Power, avg. (dBm)
RF Characteristics
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 44 dBm, = 1836.6 MHz Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz @ 600 kHz Gain Drain Efficiency All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 11 Rev. 03.1, 2009-02-20
Symbol
EVM RMS ACPR ACPR Gps
Min
-- -- -- -- --
Typ
2.0 -62 -76 16.5 40.5
Max
-- -- -- -- --
Unit
% dBc dBc dB %
D
*See Infineon distributor for future availability.
PTFA180701E PTFA180701F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
15.5 44 --
Typ
16.5 45 -30
Max
-- -- -29
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.125 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 28 V, ID = 550 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 70 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 201 1.15 -40 to +150 0.87
Unit
V V C W W/C C C/W
Ordering Information
Type and Version
PTFA180701E PTFA180701E V4 V4
Package Type
H-36265-2 H-37265-2
Package Description
Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended
Marking
PTFA180701E PTFA180701F
*See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 03.1, 2009-02-20
PTFA180701E PTFA180701F
Typical Performance (measurements taken in production test fixture)
Edge EVM and Modulation Spectrum vs. Quiescent Current
VDD = 28 V, = 1836.6 MHz, POUT = 44 dBm
2.6 2.4 -10 -20 -30
60
Three-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 550 mA, = 1840 MHz
Modulation Spectrum (dBc)
ACP Low
-40 -45 -50
50
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.40 0.50 0.60
EVM 400 kHz
-40 -50 -60 -70
40 30 20 10 0 30 32 34 36 38 40 42 44 46
ACP Up
ALT Up Efficiency
-55 -60 -65 -70
600 kHz
-80
-90 0.70
Quiescent Current (A)
Output Power, Avg. (dBm)
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 550 mA, = 1836.6 MHz
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 550 mA, = 1840 MHz, tone spacing = 1 MHz
-25 -30 70 60
-40
50
Modulation Spectrum (dBc)
Efficiency Drain Efficiency (%)
-50 -60 -70 -80 -90 30 32 34 36 38 40 42 44 46 40
-35
3rd Order 5th 7th
50 40 30 20 10
IMD (dBc)
400 kHz
30 20
-40 -45 -50 -55
600 kHz
10 0
Efficiency
-60 30 35 40 45 50 0
Output Power (dBm)
Output Power, PEP (dBm)
Data Sheet
3 of 11
Rev. 03.1, 2009-02-20
Efficiency (%)
Adj. Ch. Power Ratio (dBc)
EVM RMS (avg. %) .
Drain Efficiency (%)
PTFA180701E PTFA180701F
Typical Performance (cont.)
Broadband Test Fixture Performance (P-1dB)
VDD = 28 V, IDQ = 550mA
19 70
CW Broadband Performance
VDD = 28 V, IDQ = 550 mA, POUT = 43 dBm
55 50
40 30
Drain Efficiency Output Power (dBm) & Efficiency (%)
18 17 60 50
Efficiency (%)
45 40 35 30 25
Gain Efficiency
20 10 0 -10
Output Power
16 15 14 1760 40 30
Gain
Return Loss
-20
1800
1840
1880
20 1920
-30 20 1760 1780 1800 1820 1840 1860 1880 1900 1920
Frequency (MHz)
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
VDD = 28 V, 1 = 1849, 2 = 1840 MHz
18.0
Power Sweep
VDD = 28 V, = 1880 MHz
-20 -25 -30
IDQ = 275 mA IDQ = 825 mA
17.5
IDQ = 825 mA
IMD (dBc)
-35 -40 -45 -50 -55 -60 26 30
Power Gain (dB)
17.0 16.5 16.0 15.5 15.0 14.5
IDQ = 550 mA
IDQ = 550 mA
IDQ = 275 mA
35 37 39 41 43 45 47 49
34
38
42
46
Output Power, Avg. (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03.1, 2009-02-20
Gain, Return Loss (dB)
Gain (dB)
PTFA180701E PTFA180701F
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 550 mA, = 1880 MHz
Output Power (P-1dB) vs. Drain Voltage
IDQ = 550 mA, = 1880 MHz
64 58
20 19 18
50
Gain (dB)
17 16 15 14 13 12 0
Gain
46 40 34 28 22 16 10
Output Power (dBm)
Drain Efficiency (%)
Efficiency
52
49
48
47
46 24 26 28 30 32
10
20
30
40
50
60
70
80
Output Power (W)
Drain Voltage (V)
IS-95 CDMA Performance
VDD = 28 V, IDQ = 550 mA, = 1840 MHz TCASE = 25C TCASE = 90C Efficiency
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
-30
45 40
1.03
0.15 A 0.44 A 0.73 A 1.10 A 2.20 A 3.30 A 4.41 A 5.51 A
Drain Efficiency (%)
35 30 25 20 15 10 5 0
ACP C - 0.75 MHz
-40 -45 -50 -55 -60 -65 -70 -75
Normalized Bias Voltage (V)
Adj. Ch. Power Ratio (dBc)
-35
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100
ACPR C + 1.98 MHz
30
32
34
36
38
40
42
44
46
Output Power, Avg. (dBm)
Case Temperature (C)
Data Sheet
5 of 11
Rev. 03.1, 2009-02-20
PTFA180701E PTFA180701F
Broadband Circuit Impedance
0 .1
Z0 = 50
D
Z Source
Z Load
0.0 0.1 0.2
1920 MHz
G S
Z Load
1760 MHz
Frequency
MHz 1760 1800 1840 1880 1920 R 7.9 7.4 7.0 6.5 6.1
Z Source
jX -10.3 -10.0 -9.7 -9.3 -8.9 R 4.6 4.5 4.5 4.4 4.3
Z Load
VEL
0.1
jX -1.4 -1.1 -0.8 -0.3 -0.1
Z Source
1920 MHz 1760 MHz
0. 2
See next page for circuit information
Data Sheet
6 of 11
WA <---
Rev. 03.1, 2009-02-20
0.3
PTFA180701E PTFA180701F
Reference Circuit
C1 0.001F R2 1.3KV R1 1.2KV
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F C3 0.001F R3 2K V R4 2K V R5 10 V C4 10F 35V R6 1K V C5 R7 0.1F 1KV C6 0.01F C7 10pF l7 R8 10 V C8 10pF RF_IN l1 l2 l3 l4 l6 DUT l5 l8 l9 l11 l13 l 14 C12 1.2pF l12 l10 C9 10pF C10 1F
C11 100F 50V
C13 10pF l15
a 18 070 ef _sc 1 h
RF_OUT
Reference circuit schematic for 1840 MHz Circuit Assembly Information DUT PTFA180701E or PTFA180701F PCB 0.76 mm [.030"], r = 3.48 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10, l11 l12 l13 l14 l15
LDMOS Transistor Rogers, RO4350
1 oz. copper Dimensions: L x W (in.) 0.131 x 0.067 0.578 x 0.067 0.050 x 0.523 0.152 x 0.772 0.050 x 0.772 0.048 x 0.029 0.453 x 0.042 0.054 x 0.604 0.320 x 0.604 0.075 x 0.211 0.637 x 0.044 0.162 x 0.067 0.287 x 0.067 0.123 x 0.067
Electrical Characteristics at 1840 MHz1 Dimensions: L x W ( mm) 0.034 , 50.0 3.33 x 1.70 0.149 , 50.0 14.68 x 1.70 0.014 , 10.2 1.27 x 13.28 0.044 , 7.1 3.86 x 19.61 0.014 , 7.1 1.27 x 19.61 0.012 , 78.0 1.22 x 0.74 0.115 , 65.0 11.51 x 1.07 0.016 , 8.9 1.37 x 15.34 0.090 , 8.9 8.13 x 15.34 0.020 , 21.8 1.91 x 5.36 0.162 , 64.0 16.18 x 1.12 0.042 , 50.0 4.11 x 1.70 0.074 , 50.0 7.29 x 1.70 0.032 , 50.0 3.12 x 1.70
1Electrical characteristics are rounded
Data Sheet
7 of 11
Rev. 03.1, 2009-02-20
PTFA180701E PTFA180701F
Reference Circuit (cont.)
R5 C5 R4 C4 R6 R3 R1 R7 R2 C3 LM QQ1 C1 C2 C10 C11 C9 C6 C7 R8
VDD
Q1
RF_IN
C8 C12 C13
RF_OUT
A180701_01
RO4350
a180701ef _assy
Reference circuit assembly diagram* (not to scale) Component C1, C2, C3 C4 C5 C6 C7, C9 C8, C13 C10 C11 C12 Q1 QQ1 R1 R2 R3 R4 R5, R8 R6, R7 Description Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Capacitor, 0.01 F Ceramic capacitor, 10 pF Ceramic capacitor, 10 pF Ceramic capacitor, 1 F Electrolytic capacitor, 100 F, 50 V Ceramic capacitor, 1.2 pF Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Potentiometer 2 k-ohms Chip resistor 10 ohms Chip resistor 1 k-ohms Suggested Manufacturer Digi-Key Digi-Key Digi-Key ATC ATC ATC Digi-Key Digi-Key ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 200B 103 100B 100 100A 100 445-1411-1-ND PCE3718CT-ND 100B 1R2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND
*Gerber files for this circuit available on request. Data Sheet 8 of 11 Rev. 03.1, 2009-02-20
PTFA180701E PTFA180701F
Package Outline Specifications Package H-36265-2
(45 X 2.03 [.080]) 2X 7.11 [.280] C L
D
2.590.51 [.102.020] 15.340.51 [.604.020] FLANGE 9.78 [.385]
S
C L LID 10.160.25 [.400.010]
G
2X R1.60 [R.063] 2x 7.11 [.280] 15.23 [.600] 10.160.25 [.400.010] SPH 1.57 [.062] 4X R1.52 [R.060]
3.560.38 [.140.015 0.0381 [.0015] -A20071116_h36+37265_POsvsd_h362652 . -
20.31 [.800]
1.02 [.040]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 03.1, 2009-02-20
PTFA180701E PTFA180701F
Package Outline Specifications (cont.) Package H-37265-2
(45 X 2.03 [.080])
C L
2.590.51 [.102.020]
D
15.34.51 [.604.020]
LID 10.160.25 [.400.010] FLANGE 10.16 [.400]
C L
10.16 [.400]
G
2X 7.11 [.280] FLANGE 4X R0.63 [R.025] MAX
LID 10.160.25 [.400.010] SPH 1.57 [.062]
|0.025 [.001]|-A3.56.38 [.140.015]
S
10.16 [.400]
1.02 [.040]
071119_h-36+37265_POs_h-37265-2
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
10 of 11
Rev. 03.1, 2009-02-20
PTF180701E/F Confidential, Limited Internal Distribution Revision History: 2009-02-20 Previous Version: 2006-08-10, Data Sheet Page 1, 3, 9, 10 8 Subjects (major changes since last revision) Update to product V4, with new package technologies. Update package outline diagrams. Fixed typing error
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 03.1, 2009-02-20

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